TUNNEL MAGNETORESISTANCE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistance effect element that uses a Heusler alloy with a crystal structure having high-level regularity, whose Tunnel Magneto Resistive (TMR) ratio is high.;SOLUTION: A Cr layer 13 with a body-centered cubic lattice structure is formed on a ferromagnetic layer 12 having the body-centered cubic lattice structure. Furthermore, on the Cr layer 13, there are formed the Heusler alloy layer 14, a tunnel barrier layer 15, and the Heusler alloy layer 16 in sequence.;COPYRIGHT: (C)2009,JPO&INPIT