THREE DIMENSIONAL MICROFABRICATION METHOD, AND THREE DIMENSIONAL MICROSTRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a three dimensional microfabrication method capable of forming a three dimensional microstructure which is complex and of high density on the surface of a substrate.;SOLUTION: In a first process, by irradiating electron beam to the surface of a group III-V compound semiconductor substrate 1 in vacuum, a natural oxide film 2 on the surface of the substrate 1 is replaced with group III oxide 3 which is chemically stable, forming a reformed mask part 3 periodically. In a second process, the temperature of the substrate 1 is raised in vacuum, so that the natural oxide film 2 in other than the reformed mask part 3 is desorbed for substrate surface exposuse. In a third process, the substrate 1 is heated at a specified temperature in such environment as a group V material is supplied in vacuum, and the group III atom is released by priority from the exposed part of the substrate surface for hopping on the reformed mask part 3, thereby forming a dimple 4 in the exposed part. In a fourth process, by performing a molecular beam epitaxial growth method using a solid growth material, a group III-V compound semiconductor crystal 5 is selectively grown at part of the dimple 4.;COPYRIGHT: (C)2009,JPO&INPIT