GaN-BASED LED CHIP AND LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting device that can be used suitably as an excitation light source of a white light-emitting device for illumination and has improved luminous output by improving the output of the light-emitting device where a GaN-based LED chip is subjected to flip-chip packaging.;SOLUTION: The light-emitting device is configured by flip-chip packaging a GaN-based LED chip described in a passage (A). (A) The GaN-based LED chip 100 is provided with a translucent substrate 101, and a GaN-based semiconductor layer L formed on the translucent substrate 101. The GaN-based semiconductor layer L has a stacked structure which includes an n-type layer 102, a luminous layer 103, and a p-type layer 104 in this order from the side of the translucent substrate 101. On the p-type layer 104, a positive electrode E101, which is composed of a translucent electrode E101a made of an oxide semiconductor and a positive contact electrode E101b electrically connected to the translucent electrode, is formed. The area of the positive contact electrode E101b is less than a half of the area of the upper surface of the p-type layer 104.;COPYRIGHT: (C)2009,JPO&INPIT