The technology which prevents the fact that parasitic bimuretsuto exerts influence on ion implantation

摘要

The technology which prevents the fact that parasitic bimuretsuto exerts influence on ion implantation is disclosed. With illustrate execution form of one specification, as for technology, it can actualize as the device which prevents the fact that parasitic bimuretsuto exerts influence on ion implantation. As for the device, it can include the controller which forms the ion beam which possesses the width which is decided beforehand by scanning the spot beam on front and back. The device can include when standing still the opening mechanism which allows passing the spot beam. The device, furthermore, is connected with by the controller and opening mechanism, was scanned the spot beam which same period does opening mechanism and also the synchronization mechanism which is made to move can include. With this, it can pass the spot beam which was scanned, but parasitic bimuretsuto of one or more which is annexed to aforementioned spot beam reaches the point where it is cut off. Selective figure Figure 1