首页> 外国专利> Tantalic acid lithium/the precise grinding constituent for the lithium niobate monocrystal material and uses that the tantalic acid lithium which/the precise grinding mannered null tantalic acid lithium monocrystal

Tantalic acid lithium/the precise grinding constituent for the lithium niobate monocrystal material and uses that the tantalic acid lithium which/the precise grinding mannered null tantalic acid lithium monocrystal

机译:钽酸锂/铌酸锂单晶材料的精密研磨成分,并使用/精密研磨形成的钽酸锂单晶的钽酸锂

摘要

PROBLEM TO BE SOLVED: To obtain a polishing composition which can polish the surface of a hard brittle material in high precision and can realize an excellent polishing efficiency and a long polishing life by dispersing in an aqueous medium α-alumina comprising microparticles having a specified or smaller mean particle diameter and a BET specific surface area in a specified range. ;SOLUTION: The α-alumina used comprises microparticles having a mean particle diameter (D50) of 0.3 μm or below, and a BET specific surface area of 15-50 m2/g. The α-alumina micropartieles used are desirably primary particles obtained by grinding a fired product made from boehmite and/or pseudo- boehmite and are desirably dispersed in an amount of 5-40 wt.%. It is desirable that the composition is adjusted to a pH of 8.5-12, and it is effective that silica particles are dispersed in the composition. The silica particles are desirably particles of colloidal silica, amorphous silicon dioxide, or fumed silica, and are dispersed in an amount of 45 wt.% or below, and it is desirable that the total amount of the α-alumina microparticles and the silica particles is at most 50 wt.%.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:获得一种抛光组合物,该抛光组合物可以高精度地抛光硬质脆性材料的表面,并且可以通过分散在包含具有特定粒径的α-氧化铝的水性介质中而实现优异的抛光效率和长的抛光寿命。或更小的平均粒径和BET比表面积在规定范围内。 ;解决方案:所使用的α-氧化铝包括平均粒径(D50)为0.3μm或更小的微粒,且BET比表面积为15-50m2 / g。理想地,所使用的α-氧化铝微粒是通过研磨由勃姆石和/或假勃姆石制成的煅烧产物而获得的初级颗粒,并且期望地以5-40重量%的量分散。理想的是将组合物的pH调节至8.5-12,并且将二氧化硅颗粒分散在组合物中是有效的。二氧化硅颗粒理想地是胶体二氧化硅,无定形二氧化硅或热解二氧化硅的颗粒,并且以45重量%以下的量分散,并且期望α-氧化铝微粒和二氧化硅的总量。颗粒含量不超过50 wt。%;版权:(C)2000,JPO

著录项

  • 公开/公告号JP4290799B2

    专利类型

  • 公开/公告日2009-07-08

    原文格式PDF

  • 申请/专利权人 山口精研工業株式会社;

    申请/专利号JP19990046039

  • 发明设计人 山口 良延;林 良樹;薄井 晋;

    申请日1999-02-24

  • 分类号C09K3/14;B24B37/00;H01L21/304;H01L41/24;C01F7/44;C30B29/30;

  • 国家 JP

  • 入库时间 2022-08-21 19:38:27

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