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Diamond electromagnetic radiation cathode, electronic emitter, electron microscope and electron beam exposure machine

机译:金刚石电磁辐射阴极,电子发射器,电子显微镜和电子束曝光机

摘要

The electromagnetic radiation cathode whose energy width is narrow at the high brightness which uses the diamond, it designates that the electronic emitter, and the electronic equipment which uses these are offered as purpose. The diamond electromagnetic radiation cathode by this invention being the diamond electromagnetic radiation cathode which at least possesses the monocrystal diamond in part, is prismatic the particular diamond electromagnetic radiation cathode has the acute section in one place of the electromagnetic radiation section, the kinds which are constituted by the semiconductor where electric character of two types or more differs at least, form the said semiconductor the n type impurity to be the n type semiconductor which 2 1015 cm -3 or more is included, be the p type semiconductor to which already kinds 2 1015 cm -3 or more include the p type impurity, the said n type semiconductor connecting with the said p type semiconductorThe time, in order for the electron to flow to the said p type semiconductor from the said n type semiconductor due to the electric current introduction terminal of pair, negative electric potential is impressed in the said n type semiconductor vis-a-vis the said p type semiconductor, at the same time said n type semiconductor features that the component where the electron flows to the aforementioned electromagnetic radiation section is contained.
机译:使用金刚石的能量宽度在高亮度下窄的电磁辐射阴极,是指定提供的电子发射器和使用它们的电子设备。本发明的金刚石电磁辐射阴极是至少部分地具有单晶金刚石的金刚石电磁辐射阴极,是棱柱形的,特定的金刚石电磁辐射阴极在电磁辐射部分的一处具有锐角部分,其构成为通过至少两种以上的电特性不同的半导体,将形成为所述半导体的n型杂质为包含2×1015cm -3 以上的n型半导体。所述n型半导体与所述p型半导体连接的时间为已使2 1015cm -3 大于或等于2 1015 cm -3 的p型半导体,以使电子流向所述p型半导体。由于成对的电流引入端子,来自所述n型半导体的p型半导体在所述n型半导体中施加负电势。相对于所述p型半导体,同时所述n型半导体的特征在于,包含电子流向上述电磁辐射部的成分。

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