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METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANTATION SPECIES FOR A GIVEN GATE HEIGHT
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANTATION SPECIES FOR A GIVEN GATE HEIGHT
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机译:给定门高的增加排水渗透深度和源灌种的方法
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摘要
The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions.
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