首页> 外国专利> DYNAMIC HARD MAGNET THICKNESS ADJUSTMENT FOR REDUCED VARIATION IN FREE LAYER STABILIZATION FIELD IN A MAGNETORESISTIVE SENSOR

DYNAMIC HARD MAGNET THICKNESS ADJUSTMENT FOR REDUCED VARIATION IN FREE LAYER STABILIZATION FIELD IN A MAGNETORESISTIVE SENSOR

机译:磁阻传感器自由层稳定场中减小变化的动态硬磁体厚度调整

摘要

A method for manufacturing a current perpendicular to plane magnetoresistive sensor that allows for dynamic adjustment of free layer biasing to compensate for variations in thickness of an electrically insulating layer that separates the hard bias layers from the free layer. During fabrication of the sensor, the actual thickness of the insulation layers is measured. Then, to maintain a desired magnetic stabilization of the free layer one of three options can be utilized. Option one; adjust the stripe height target to maintain the desired magnetic stabilization. Option two; adjust the hard magnet thickness to maintain the desired magnetic stabilization. Option three; use a combination of option one and option two, adjusting both the stripe height target and the hard magnet thickness to maintain the desired magnetic stabilization.
机译:一种用于制造垂直于平面磁阻传感器的电流的方法,该方法允许动态调整自由层偏置以补偿将硬偏置层与自由层分开的电绝缘层的厚度变化。在传感器的制造期间,测量绝缘层的实际厚度。然后,为了维持自由层的期望的磁稳定性,可以使用三种选择之一。选项一;调整条纹高度目标以保持所需的磁稳定度。选项二;调整硬磁铁的厚度,以保持所需的磁稳定性。选项三;结合使用选项一和选项二,同时调整条带高度目标和硬磁铁厚度,以保持所需的磁稳定性。

著录项

  • 公开/公告号US2009166331A1

    专利类型

  • 公开/公告日2009-07-02

    原文格式PDF

  • 申请/专利权人 ARLEY CLEVELAND MARLEY;

    申请/专利号US20070966028

  • 发明设计人 ARLEY CLEVELAND MARLEY;

    申请日2007-12-28

  • 分类号B05D5/12;B44C1/22;

  • 国家 US

  • 入库时间 2022-08-21 19:35:10

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