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MIS GATE STRUCTURE TYPE HEMT DEVICE AND METHOD OF FABRICATING MIS GATE STRUCTURE TYPE HEMT DEVICE
MIS GATE STRUCTURE TYPE HEMT DEVICE AND METHOD OF FABRICATING MIS GATE STRUCTURE TYPE HEMT DEVICE
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机译:MIS门结构型HEMT装置及制造MIS门结构型HEMT装置的方法
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摘要
A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm−1).
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