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Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
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机译:具有背面照明的光传感器和像素阵列以及形成该光传感器的方法
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摘要
An imaging sensor with an array of FET pixels and method of forming the imaging sensor. Each pixel is a semiconductor island, e.g., N-type silicon on a Silicon on insulator (SOI) wafer. FETs are formed in one photodiode electrode, e.g., a P-well cathode. A color filter may be attached to an opposite surface of island. A protective layer (e.g., glass or quartz) or window is fixed to the pixel array at the color filters. The image sensor may be illuminated from the backside with cell wiring above the cell. So, an optical signal passes through the protective layer is filtered by the color filters and selectively sensed by a corresponding photo-sensor.
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