首页> 外国专利> Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method

Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method

机译:包括单片集成跨阻放大器和评估电子器件的光电探测器及其制造方法

摘要

The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
机译:发明内容本发明的目的是构造一种光电检测器( 10 ),使得在现有技术中已知的检测器上处理低发光强度不会产生不利影响,尤其是在单片集成评估电子设备时。所述目的通过用于处理低发光强度的光电检测器来实现,该光电检测器包括单片集成的跨阻放大器和单片集成的评估电子器件。将实际的光电元件( 20 )分配给光优选落在其上的芯片面。电子电路组件( 30 )布置在相对的芯片面上。光电管和电子电路之间的电连接( 40 )在垂直于芯片法线的方向上具有延伸。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号