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Sense amplifier for low-voltage applications
Sense amplifier for low-voltage applications
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机译:感应放大器,适用于低压应用
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摘要
A sense amplifier for reading a memory cell is provided. The sense amplifier includes a first input branch for applying a biasing voltage to the memory cell through regulation means and for receiving a first input current indicative of a state of the memory cell, the regulation means including a first controlled element having a voltage-controlled conductivity and a control element for applying a first control voltage corresponding to the first input current to the first controlled element, and sensing means for determining the state of the memory cell according to a comparison between the first input current and a reference value; the sensing means includes a second input branch including a second controlled element (M3m), shifting means (215m) for applying a second control voltage equal to the first control voltage shifted by a predetermined offset to the second controlled element, a second input current corresponding to the second control voltage flowing through the second input branch, and comparison means for comparing the second input current with the reference value.
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机译:提供了一种用于读取存储单元的读出放大器。读出放大器包括第一输入支路,用于通过调节装置向存储单元施加偏置电压并用于接收指示存储单元的状态的第一输入电流,该调节装置包括具有电压控制电导率的第一控制元件。控制元件,用于将与第一输入电流相对应的第一控制电压施加到第一被控制元件;以及感测装置,用于根据第一输入电流与参考值之间的比较来确定存储单元的状态;传感装置包括第二输入分支,第二输入分支包括第二受控元件(M 3 B> m I>),移位装置( 215 B> m I>)用于将等于偏移了预定偏移量的第一控制电压的第二控制电压施加到第二受控元件,与流过第二输入分支的第二控制电压相对应的第二输入电流,以及用于比较第二输入电流与参考值。
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