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Method, program product and apparatus for improving calibration of resist models used in critical dimension calculation

机译:用于改进用于临界尺寸计算的抗蚀剂模型的校准的方法,程序产品和设备

摘要

Improved calibration of a resist model used in critical dimension (CD) calculation is disclosed. A dose function is obtained based on optical tool to be used form the resist on a wafer. The dose function indicates the amount of energy in a resist. The dose function is convolved with a convolution kernel to obtain a modified dose function. The convolution kernel has variable diffusion lengths in different directions. The convolution kernel may include multiple Gaussian kernels each having variable diffusion lengths in different directions. The modified dose function is converted into a CD value which is compared with a target value. If necessary, the diffusion lengths of the Gaussian kernels are adjusted based on the comparison result.
机译:公开了用于临界尺寸(CD)计算中的抗蚀剂模型的改进的校准。基于光学工具获得剂量函数,以用于形成晶片上的抗蚀剂。剂量函数表示抗蚀剂中的能量。用卷积核对剂量函数进行卷积以获得修改后的剂量函数。卷积核在不同方向上具有可变的扩散长度。卷积核可以包括多个高斯核,每个高斯核在不同方向上具有可变的扩散长度。修改后的剂量函数转换为CD值,与目标值进行比较。如有必要,可根据比较结果调整高斯核的扩散长度。

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