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Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
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机译:由包含稀土过渡金属的层状结构的加热部分形成的化合物半导体
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摘要
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
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