Single crystals LuAG: Pr doped with rare earth elements for manufacture of scintillation detectors and solid lasers and manufacture thereof

摘要

In the present invention, there is disclosed a single crystal LuAG : Pr intended for the manufacture of scintillation detectors and solid lasers, said single crystal being doped with rare earth elements Ce, Y, Gd and having the following composition Lui3-m-x(RE)imAli5Oi12Prix, wherein RE represents one or several elements being selected from the rare earth elements Y, Gd, Ce, where m = 0.001 to 0.1 atomic percent and x = 0.002 to 0.05 atomic percent of all the crystal elements. Preparation process of such single crystals is carried out by modified Czochralski method using resistance heating by tungsten heating elements and in molybdenum (Mo) or tungsten (W) crucible with volume of 0.15 to 3 dme3 in an inert or reducing medium of protecting atmosphere Ar with the maximum admixture of 80 percent by volume of Hi2, whereby the crystal grows up from a melt of oxides of the corresponding elements on an oriented seed in crystallographic direction 111 or 100 prepared from non-doped single crystal LuAG(Lui3Ali5Oi12) at rotation velocity 2 to 15 rpm, and pulling rate 0.3 to 3 mm/h.