首页> 外国专利> Union between a microstrip line and a waveguide.

Union between a microstrip line and a waveguide.

机译:微带线和波导之间的联合。

摘要

Arrangement for a junction between a line micrDisposición to a junction between a microstripline and a waveguide, comprising - a líobanda and a waveguide, comprising - a microstrip line (ML) applied to a supenea side microstrip (ML) applied to an upper side of a dielectric substrate (S), - a derior guide a dielectric substrate (S), - a waveguide applied on the upper side of sustrat waves applied on the upper side of the substrate ( S) with an opening (OB) on at least one superfo (S) with an opening (OB) on at least a front surface, a side wall of the guide ICIE front, in a side wall of the waveguide is a metallized layer (LS) on sobde waves is a metallized layer (LS) formed on the substrate (s), - a recess (a) made lre the substrate (s), - a recess (a) held in the layer metallised (LS), into which surplus metallized layer (LS), to dent ro which protrudes the microstrip line (ML) through aesale the microstrip line (ML) through the opening (OB) into the waveguide, - ubertura (OB) into the guide waves - a rear-face metallization (RM) on Sobna rear-face metallization (RM) held on a rear side of the substrate (S), - holes dere a rear side of the substrate (S), - vias (VH) electrically conductive ent interconnection (VH) electrically conducting between the metallized layer (LS) on the upper side re the metallized layer (LS) on the upper side of the substrate (S) and the metallization traserodel side substrate (S) and metallizing rear side (RM), which surround the recess (a), CHARACTERIZATION (RM), which surround the recess (a), characterized in that in the region of the opening (OB) of guada because the area of ​​the opening (OB) of the waveguide in a side wall opposite the ladoía wave in a a, opposite to the upper side of the substrate (S) of the waveguide, and upper substrate (S), the waveguide side wall is made a stepped structure (ST) conecstá made a stepped structure (ST) conductively connected to the line Tada microstrip conductively to the microstrip line (ML) in at least one part (ST1), in that escal (ML) in at least one part (ST1), in that the steps the stepped structure (ST) have a aones of stepped structure (ST) have an increasing width in the longitudinal direction, increasing apanchura in the longitudinal direction, away from the junction of the waveguide. rtada binding of the waveguide.
机译:线micrDisposición与微带线和波导之间的连接点之间的连接的布置,包括-lobobanda和波导,包括-施加到腹膜侧微带(ML)上的微带线(ML),该微带线施加到a的上侧介电基片(S)-导引介电基片(S)的导波板-施加在至少一个超反射片上具有开口(OB)的,在基片(S)的上侧施加的南极波的上侧的波导(S)在至少一个前表面上具有一个开口(OB),在波导的侧壁中是导向ICIE正面的一个侧壁,在波上是一个金属化层(LS),在波上是一个金属化层(LS)在衬底上,-在衬底上制作一个凹槽(a),-保留在金属化(LS)层中的凹槽(a),剩余的金属化层(LS)进入其中,以压入突出的ro穿过天线的微带线(ML)穿过开口(OB)进入波导,通过-ubertura(OB)进入微带线(ML) e导波-固定在基板(S)背面的Sobna背面金属化(RM)上的背面金属化(RM)-基板(S)背面的孔洞--通孔(VH )导电层间互连(VH),在上侧的金属化层(LS)和基板(S)的上侧的金属化层(LS)与金属化的traserodel侧基板(S)和金属化的背面之间导电围绕凹口(a)的侧面(RM),围绕凹口(a)的特征(RM),其特征在于在瓜达孔(OB)的区域,因为孔(OB)的面积)在与Ladoía波相对的侧壁中的波导(a)相对于波导基板(S)的上侧和上基板(S),波导侧壁制成阶梯状结构(ST)制作了一个阶梯结构(ST),导电地连接到Tada微带线,导电地连接到微带线(ML),至少一个部分(ST1),其中至少一个部分(ST1)处于阶梯(ML),因为台阶的阶梯结构(ST)具有多个阶梯结构(ST)的纵向宽度增大,沿纵向增加膜片,远离波导的结。 rtada绑定波导。

著录项

  • 公开/公告号ES2312850T3

    专利类型

  • 公开/公告日2009-03-01

    原文格式PDF

  • 申请/专利权人 EADS DEUTSCHLAND GMBH;

    申请/专利号ES20030798047T

  • 发明设计人 MULLER THOMAS JOHANNES;

    申请日2003-07-30

  • 分类号H01P5/107;

  • 国家 ES

  • 入库时间 2022-08-21 19:23:56

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