MICROFABRICATION METHODS FOR FORMING ROBUST ISOLATION AND PACKAGING

摘要

Provided are electrical single-crystal silicon (SCS) isolation devices and methods for manufacturing the SCS isolation devices. The isolation device can include a trench isolation structure formed using a trench having sidewall dielectrics and a follow-up filling of a metal or a polymer that is conductive or nonconductive. Metals such as a copper can be electroplated to fill the trench to provide robust mechanical support and a thermal conducting path for subsequent fabrication processes. In addition, exemplary embodiments provide a CMOS compatible process for self-packaging the disclosed isolation device or other devices from CMOS processing. In an exemplary embodiment, a backside packaging can be performed on a structured substrate prior to fabricating the active structures from the front side. Following the formation of the active structures (e.g., movable micro-sensors), a front-side packaging can be performed using bonding pads to complete the disclosed self-packaging process.