Reducing the consumption of process gases during chemical gas phase separation of silicon layers during which hydrogen is produced in addition to the separating layer as a reaction product

摘要

The method for the reduction of process gas consumption in chemical gas phase deposition of silicon containing layer, which emerges primary hydrogen as reaction product for thin film solar module, comprises selectively removing hydrogen from a system for chemical gas phase deposition. The process gas that is not yet reacted remains in the system and is recirculated from the gas outlet of process chamber (24) to gas inlet (8) of the process chamber. The hydrogen is removed from the system by a hydrogen permeable membrane (31). The method for the reduction of process gas consumption in chemical gas phase deposition of silicon containing layer, which emerges primary hydrogen as reaction product for thin film solar module, comprises selectively removing hydrogen from a system for chemical gas phase deposition. The process gas that is not yet reacted remains in the system and is recirculated from the gas outlet of process chamber (24) to gas inlet of the process chamber. The hydrogen is removed from the system by a hydrogen permeable membrane (31), which is present in gas pipeline system behind the gas outlet of the process chamber. The system for chemical gas deposition is a system by which low pressure is present in the process chamber (low pressure chemical vapor deposition) and is a deposition system reinforcing plasma (plasma enhanced chemical vapor deposition).