The method involves depositing a thin layer (14) with an insulating material, and opening the layer in spaces. A catalyst is deposited on a very thin layer (17), and a conductive material i.e. copper, is deposited on a thick layer (20). An upper part of a structure is eliminated by mechano-chemical polishing until a top stage of the catalyst layer is reached. The catalyst is eliminated with respect to selected flanks of portions of the insulating material, where the catalyst is selected from a group of materials of iron and iron oxides. An independent claim is also included for a method for forming a connection stage of an integrated circuit.
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