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Method of Measuring the Thickness of Thin Film Layer on Curved Substrate Using Infrared Thermal Image System

机译:红外热像仪测量弯曲基板上薄膜层厚度的方法

摘要

The present invention relates to a method of measuring the thickness of a thin film layer using an infrared thermal imaging system. The object of the present invention is to provide a method of measuring the thickness of a thin film layer fast in such a way as to obtain the two-dimensional (2-D) thickness distribution of the thin film layer at one time by measuring infrared spontaneous light emitted from a target surface using an infrared imaging camera. The present invention includes a means for measuring the thickness of a thin film coated on a flat base surface, which outputs the thickness of the thin film layer based on the emissivity of the base surface and the coating layer and the intensity of the infrared spontaneous light that is measured on the flat target surface and converted into temperature, and a means for measuring the thickness of a thin film layer coated on a curved base surface, which outputs the thickness of the thin film layer while considering directional emissivity attributable to the materials of the base surface and the coating layer.
机译:本发明涉及一种使用红外热成像系统测量薄膜层厚度的方法。本发明的目的是提供一种快速测量薄膜层的厚度的方法,从而通过测量红外光谱一次获得薄膜层的二维(2-D)厚度分布。使用红外热像仪从目标表面发出的自发光。本发明包括一种用于测量涂覆在平坦的基面上的薄膜的厚度的装置,该装置基于基面和涂层的发射率以及红外自发光的强度来输出薄膜层的厚度。它是在平坦的目标表面上测量并转换为温度的装置,以及一种测量涂覆在弯曲的基面上的薄膜层厚度的装置,该装置在考虑可归因于以下材料的方向发射率的情况下输出薄膜层的厚度底面和涂层。

著录项

  • 公开/公告号KR100871974B1

    专利类型

  • 公开/公告日2008-12-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040037295

  • 发明设计人 박일석;박상민;

    申请日2004-05-25

  • 分类号G01B11/06;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:23

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