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CHEMICAL TREATMENT TO REDUCE MACHINING-INDUCED SUB-SURFACE DAMAGE IN SEMICONDUCTOR PROCESSING COMPONENTS COMPRISION SILICON CARBIDE
CHEMICAL TREATMENT TO REDUCE MACHINING-INDUCED SUB-SURFACE DAMAGE IN SEMICONDUCTOR PROCESSING COMPONENTS COMPRISION SILICON CARBIDE
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机译:化学处理减少半导体加工成分复合碳化硅中机加工引起的亚表面损伤
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摘要
A chemical treatment method is provided to remove a crystal structure damaged from a surface of a silicon carbide element used as a semiconductor processing device. A silicon carbide is converted into a silicon oxide by treating a silicon carbide surface of a silicon carbide element by a liquid oxidizer. The silicon oxide is removed by using the liquid. A process for treating the surface of the silicon carbide and a process for removing the silicon oxide are consecutively repeated. An opening of the surface is performed by one among a liquid etchant or a plasma etching. A process for treating the surface of the silicon carbide is performed by the liquid oxidizer in an ultrasonic bath at temperature of 20~200°C for 1~100 hour.
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