An organic semiconductor device comprising organic-inorganic nano-composite dielectric layer is provided to realize excellent flexibility, low leakage current, high dielectric constant by using the organic-inorganic nano complex insulating layer. In an organic semiconductor device, a seed layer(30) is formed at the upper part of the substrate(10). A gate electrode(50) is formed on the seed layer. An organic-inorganic nano complex insulating layer(60) is formed on the substrate in which the gate electrode is formed. An organic semiconductor layer(70) is formed on the dielectric layer, and a source/drain electrode layer(80) is formed. The inorganic oxide dispersion solution is manufactured by mixing the inorganic oxide nano particle with the acid solvent and coupling agent. An organic-inorganic oxides nano composite solution is manufactured by mixing the inorganic oxide dispersion solution with the organic compound insulator. The organic-inorganic oxide cargo nano composite solution is coated on substrate.
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