A spin valve magnetoresistive device is provided to lower a coercive force of a free layer by forming the free layer and a fixed layer by Pd layer/ferromagnetic layer or ferromagnetic layer/Pd layer. A free layer and a fixed layer are formed by repetitively depositing Pd layer/first ferromagnetic layer. An antiferromagnetic layer is positioned between the free layer and the fixed layer. The first ferromagnetic layer has a vertically magnetized structure on the Pd layer. The free layer is formed between a buffer layer formed on a predetermined substrate and the antiferromagnetic layer. The Pd layer/first ferromagnetic layer of N number is formed on a top part of the buffer layer. A Pd layer and a second ferromagnetic layer are successively formed between the first ferromagnetic layer and the antiferromagnetic layer. The second ferromagnetic layer is formed between the antiferromagnetic layer and the Pd layer/first ferromagnetic layer.
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