首页> 外国专利> Method for preparation of CO3O4 thin films having mesoporous structure by electrochemical deposition and CO3O4 thin films prepared by the method

Method for preparation of CO3O4 thin films having mesoporous structure by electrochemical deposition and CO3O4 thin films prepared by the method

机译:通过电化学沉积制备具有介孔结构的co3o4薄膜的方法和通过该方法制备的co3o4薄膜

摘要

The present invention was dissolved in distilled water, and more particularly, cobalt sulfate powder relates to sasanhwasam cobalt thin films prepared by method of sasanhwasam cobalt thin film having a mesopore structure according to the electrochemical deposition method, and using this, the addition of CTAB powder and mixed to prepare an electrolytic solution (step 1); Immersing the substrate in an electrolyte solution prepared in Step 1, and prepared by the electrochemical deposition method of sasanhwasam cobalt thin film having a mesopore structure (step 2); And to a sasanhwasam cobalt thin film to be produced using production method and this the sasanhwasam cobalt thin film having a median pore structure formed by a step (step 3) of removing CTAB by using the cleaning solution from the thin-film prepared in the above Step 2 . Sasanhwasam cobalt thin film according to the present invention can be produced with a small amount of structure also sasanhwasam cobalt having a uniform mesopore structure with culture material without any additional deposition process, whereby the specific surface area is increased relative to sasanhwasam cobalt unprecedented conventional porous performance can be significantly improved it may be useful catalyst, a lithium secondary battery and the like of the super capacitor electrode material to be used using the same.
机译:本发明溶解于蒸馏水中,更特别地,硫酸钴粉末涉及通过电化学沉积方法通过具有中孔结构的sasanhwasam钴薄膜的方法制备的sasanhwasam钴薄膜,并使用其添加CTAB粉末。混合以制备电​​解液(步骤1);将基板浸入步骤1中制备的电解质溶液中,并通过电化学沉积方法制备具有中孔结构的sasanhwasam钴薄膜(步骤2);然后,对使用上述制造方法制造的sasanhwasam钴薄膜进行制造,并且该sasanhwasam钴薄膜具有通过从上述制备的薄膜中使用清洗液除去CTAB的步骤(步骤3)而形成的中位孔结构。第2步 。根据本发明的莎三花钴薄膜可以用少量的结构生产,也具有与培养材料具有均匀的中孔结构的莎三花钴,而无需任何额外的沉积过程,由此比表面积相对于莎三花钴增加了前所未有的常规多孔性能。可以显着改善,可以用作使用它们的超级电容器电极材料的催化剂,锂二次电池等。

著录项

  • 公开/公告号KR100918845B1

    专利类型

  • 公开/公告日2009-09-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070110354

  • 发明设计人 백성현;이진규;김길표;김경화;

    申请日2007-10-31

  • 分类号C25D13/02;C25D13;C25D3;

  • 国家 KR

  • 入库时间 2022-08-21 19:11:35

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