Ion source e.g. duoplasmatron, for manufacturing e.g. microprocessor, has gas volume-control valve provided in position to determine gas pressure conditions in vacuum chamber, and gas supply mechanism for guiding gases into chamber

摘要

The source e.g. duoplasmatron (1), has a vacuum chamber and a gas supply mechanism for guiding gases e.g. argon, xenon, krypton, neon, oxygen or nitrogen, hydrogen and helium, into the vacuum chamber to produce gas ions in the vacuum chamber. The gas supply mechanism has two gas supply systems with a gas surface, gas line, gas volume-control valve and a stop valve. The gas volume-control valve is provided in a position to determine gas pressure conditions in the vacuum chamber. The stop valve is provided in a position to switch the stop valve between the gases guided into the chamber. Independent claims are also included for the following: (1) a method for observing a cross section of a probe (2) a processor comprising a holder.