Ruthenium or osmium complexes of tetrakis-styryl-ethene with carbonyl ligands and optionally other ligands, used in electronic components, e.g. as light-absorber materials in photovoltaic cells

摘要

Ruthenium and/or osmium complexes (I) of tetrakis-(styryl)ethene (TSE) with carbonyl ligands and optionally with phosphane ligands and/or monodentate, single negatively-charged ligands and/or mono-, bi- or tri-dentate neutral ligands, are new. Transition metal complexes of tetrakis-(styryl)-ethene (TSE) of formula [L 1L 2 xL 3 yL 4 zM] 4(TSE) (I) are new, in which TSE : tetrakis-(styryl)-ethene; M : ruthenium and/or osmium; L 1a carbonyl ligand (CO); x : 0, 1, 2 or 3; y : 0 or 1; z : 0 or 1; (x+y) : more than 0; z : at least 1 if (x+y) is less than 3; z : at least 0 if (x+y) is 4; L 2a phosphane ligand; L 3a monodentate ligand with a single negative charge; L 4a neutral tridentate ligand if (x+y) is 1, or a neutral bidentate ligand if (x+y) is 2, or a neutral monodentate ligand if (x+y) is 3 .Independent claims are included for (1) metal complexes of di-styryl-ethene (DSE) of formula [L 1L 2 xL 3 yM] 2(DSE) (II) (2) a method (M1) for the production of tetrakis-(4-ethynylphenyl)-ethene by reacting tetrakis-(4-bromophenyl)-ethene with trimethylsilylacetylene to give tetrakis-(4-trimethylsilylethynylphenyl)-ethene and then removing the trimethylsilyl protecting groups (3) a method (M2) for the production of cis-bis-(4-ethynylphenyl)-ethene by reacting cis-bis-(4-bromophenyl)-ethene with trimethylsilylacetylene and then removing the trimethylsilyl protecting groups (4) electronic components (especially microelectronic components for reversible data storage), comprising a first electrode (12) and a second electrode (16), at least one of which is in electrical contact with a layer (14, 20) containing a complex (I) or (II) as above . In complexes (II), M : Ru; DSE : di-styryl-ethene; x : 2; y : 1 .