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magnetic speicherzellenfeld with adjacent coupled weichmagnetischer layer

机译:相邻耦合软磁层的磁存储单元场

摘要

An MTJ element (10) is formed between orthogonal word (20) and bit lines (30). The bit line (30) is a composite line which includes a high conductivity layer (34) and a soft magnetic layer (32) under the high conductivity layer (34). During operation, the soft magnetic layer (32) concentrates the magnetic field of the current and, due to its proximity to the free layer (70), it magnetically couples with the free layer (70) in the MTJ (10). This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer (70) during formation.
机译:在正交字(20)和位线(30)之间形成MTJ元件(10)。位线(30)是复合线,其包括高导电率层(34)和在高导电率层(34)下方的软磁性层(32)。在操作期间,软磁层(32)集中电流的磁场,并且由于其靠近自由层(70),它与MTJ(10)中的自由层(70)磁性耦合。该耦合为自由层磁化提供了热稳定性,并且易于切换,并且可以通过在形成期间在自由层(70)中引入形状或晶体各向异性来进一步增强耦合。

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