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process for the production of si1 - ygey based zones with different ge held at one and the same substrate by condensation of germanium
process for the production of si1 - ygey based zones with different ge held at one and the same substrate by condensation of germanium
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机译:锗缩合在同一衬底上固定不同锗的硅锗基区的制备方法;
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摘要
Silicon-germanium based semi-conductor layer is formed on several silicon based semi-conductor zones (431a,431b,433a,433b,434) with different thicknesses resting on substrate (100). The silicon-germanium based semi-conductor layer is oxidized, to obtain microelectronic device. The microelectronic device contains several silicon-germanium based semi-conductor zones having different respective germanium contents. Silicon-germanium (Si 1-xGe x, where x is greater than 0 and less than 1, and y is greater than x) based semi-conductor layer is formed on silicon based semi-conductor zones with different thicknesses resting on substrate. The silicon-germanium based semi-conductor layer is oxidized, to obtain microelectronic device. The microelectronic device contains silicon-germanium based semi-conductor zones having different respective germanium contents. A mask (408) containing insulating material such as silica is formed in the form of bevel on the silicon-based layer.
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