BACKGROUND THYRISTOR, HALF-LEADER REGULATION WITH MECHANICAL CONTACT AND HALF-LEADER TRANSFER

摘要

The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyristor device (100) according to this invention, a self-extinguishing thyristor region (R1) is arranged on an inner region of the semiconductor substrate, a reverse conducting diode region (R3) whose outer periphery is completely enclosed with an isolation region (R2) is arranged on its outer region by at least one, and an external takeout gate electrode region (R4) is further arranged on the outermost peripheral region of the semiconductor substrate on the outer part thereof. Thus, a gate electrode (3A) provided on a surface of a gate part layer (7) of the self-extinguishing thyristor region (R1) is connected with an external takeout gate electrode (3C) formed along the outermost periphery of the substrate through a gate wiring pattern (3B) formed on a surface of a connecting region (R5). IMAGE