Ion implantation device useful in semiconductor industry, comprises hydrogen source, system for continuously supplying deionized water to source, gas housing, ionization chamber, and unit for detecting abnormality and/or leak of hydrogen

摘要

The ion implantation device comprises a source for generating hydrogen from electrochemical or chemical reaction and by electrolysis of water, a system for continuously supplying the deionized water to the source, a gas housing integrated with the source, an ionization chamber (8), a unit for detecting the abnormality and/or leak of hydrogen, a unit for stopping the generation of hydrogen when the abnormality and/or leak is detected, a unit for detecting the fall of pressure in the gas supply circuit (6), optionally a sorting unit, and a purification unit. The ion implantation device comprises a source for generating hydrogen from electrochemical or chemical reaction and by electrolysis of water, a system for continuously supplying the deionized water to the source, a gas housing integrated with the source, an ionization chamber (8), a unit for detecting the abnormality and/or leak of hydrogen, a unit for stopping the generation of hydrogen when the abnormality and/or leak is detected, a unit for detecting the fall of pressure in the gas supply circuit (6), optionally a sorting unit, and a purification unit. The output of the hydrogen source is connected to a gas line that supplies the gas to the ionization chamber. The source is connected to an exterior of the high tension zone of the ionic implanter. The quantity of hydrogen stored in the source is 1 liter. The hydrogen has a pressure of less than 10 bars in the source. An independent claim is included for an ionic implantation process.