Quantum wire array 2-dim field effect (power) transistor-QFET (especially magnetically-MQFET, but also electrically or optically gated) at room temperature

摘要

One, groups of several or many parallel vertical quantum wires arranged as 2-dimensional array interconnecting the source and drain of a transistor, are modulated with respect to their quantum-mechanical conductivity via the strength of an applied field. The Ohmic resistance of the source-drain connection via the quantum wire array is in the conducting state practically zero and the quantum wire field effect transistor's response time is solely determined by the switching time of the gate-field, which can be magnetic, electric, electroacoustic or optical. Applications for large arrays (1010 parallel QWs) is a power transistor, for small arrays (single or few parallel QWs) it is non-volatile information-storage e.g. mediated via ferromagnetic/ferroelectric layers and/or nanoparticles, where due to the properties of 1-dimensional quantized conductivity multi-level logic is realized. Through optical gating of this transistor, an extremely highly resolving 2-dimensional array of photodetectors is possible, thus forming a camera and even a solar cell.