首页> 外国专利> METHOD FOR SETTING CONTACT PARAMETER, PROGRAM FOR SETTING CONTACT PARAMETER, AND RECORDING MEDIUM RECORDING THE PROGRAM FOR SETTING CONTACT PARAMETER

METHOD FOR SETTING CONTACT PARAMETER, PROGRAM FOR SETTING CONTACT PARAMETER, AND RECORDING MEDIUM RECORDING THE PROGRAM FOR SETTING CONTACT PARAMETER

机译:设定接触参数的方法,设定接触参数的程序以及记录介质记录设定接触参数的程序

摘要

PROBLEM TO BE SOLVED: To provide a method for setting the contact parameters, which can entirely simulate the contact process of devices of a semiconductor wafer with probes by setting the contact parameters while checking them visually.;SOLUTION: The method for setting the contact parameters includes a step of preparing a coordinate diagram 1 including the time axis and the height axis, and a second step of specifying a plurality of elevating and lowering positions of the semiconductor wafer on the coordinate diagram 1 while each electrode pad of the semiconductor wafer and a plurality of probes come in contact and separate electrically, and the elevating and lowering times of the semiconductor wafer required for reaching these elevating and lowering positions, respectively, and then setting the contact parameters of the semiconductor wafer by connecting a plurality of specifying points P by straight lines thereby indicating them as a graph of broken line.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种设置接触参数的方法,该方法可以通过设置接触参数并在目视检查的同时完全模拟半导体晶片的器件与探针的接触过程;解决方案:设置接触参数的方法包括准备包括时间轴和高度轴的坐标图1的步骤,以及第二步,在该坐标图1上指定半导体晶片的多个升降位置,同时半导体晶片的每个电极焊盘和一个多个探针接触并电分离,分别到达这些上升和下降位置所需的半导体晶片的上升和下降时间,然后通过连接多个指定点P来设置半导体晶片的接触参数。直线,从而将其表示为虚线图。;版权所有:(C)2011,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010238908A

    专利类型

  • 公开/公告日2010-10-21

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20090085164

  • 发明设计人 ISHII KAZUNARI;

    申请日2009-03-31

  • 分类号H01L21/66;G01R31/28;

  • 国家 JP

  • 入库时间 2022-08-21 19:05:35

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