OPTICAL SEMICONDUCTOR ELEMENT, AND OPTICAL COHERENCE TOMOGRAPHY IMAGING DEVICE USING OPTICAL SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain an optical semiconductor element which emits light at a center wavelength of 0.9 to 1.2 μm and is made higher in output.;SOLUTION: In the optical semiconductor element which includes a GaAs substrate 1 and a multiple quantum well structure 5 provided above the GaAs substrate 1 and having two or more quantum well layers made of InGaAs and includes a luminescent stripe width of ≤4 μm, a laser oscillation suppressing mechanism for suppressing laser oscillation is provided, and the multiple quantum well structure 5 includes at least: a quantum well layer 5a₁ which emits light at a first center wavelength of ≥1.05 μm; a quantum well layer 5a₂ which emits light at a second center wavelength different from the first center wavelength; and a barrier layer 5b which is provided between the quantum well layers and has a thickness of 30 to 50 nm and has a composition lattice-matched to the GaAs substrate.;COPYRIGHT: (C)2010,JPO&INPIT