As in the chamber

摘要

PROBLEM TO BE SOLVED: To prevent the generation of contaminants on the inner wall of an etching device when etching is conducted.;SOLUTION: Metals or metal oxides each having a specific surface of 5 times the actual surface area are used as the inner wall of the etching device, the inside of a chamber is heated to ≥100°C and the water vapor pressure in the chamber is kept at ≤0.003 Pa to conduct etching. As a result, no contaminants are generated in HI dry etching.;COPYRIGHT: (C)2001,JPO