首页> 外国专利> HVNMOS/HVPMOS SWITCHED CAPACITOR CHARGE PUMP FOR IDEAL CHARGE TRANSFER

HVNMOS/HVPMOS SWITCHED CAPACITOR CHARGE PUMP FOR IDEAL CHARGE TRANSFER

机译:用于理想电荷转移的HVNMOS / HVPMOS开关电容器电荷泵

摘要

PPROBLEM TO BE SOLVED: To provide a method for suppressing on-resistances of main switches for a charge stage and a pump stage to the minimum, and to provide an integrated circuit for a charge pump. PSOLUTION: The integrated circuit includes: the charge stage; the pump stage; a single High-Voltage PMOS (HVPMOS) transistor as the main switch for each stage; and two sets of two minimum HVPMOS transistors connected in series as a bulk switch with fixed bulk connections, where the minimum HVPMOS transistors are smaller than the transistors of the main switch. The bulk of the main switch is switched synchronously to the voltage node of the HVPMOS transistor of the main switch to force the bulk voltage (VSBB/SB) to be equal to or larger than either the source voltage (VSBS/SB) or the drain voltage (VSBD/SB). Two non-overlapping clock signals are used to trigger the HVPMOS transistors of the charge stage and the pump stage. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供一种将电荷级和泵级的主开关的导通电阻抑制到最小的方法,并提供一种电荷泵的集成电路。

解决方案:集成电路包括:充电阶段;泵级;每个级都有一个高压PMOS(HVPMOS)晶体管作为主开关;两组两个最小的HVPMOS晶体管串联在一起,作为具有固定体连接的体开关,其中最小HVPMOS晶体管小于主开关的晶体管。主开关的主体被同步切换到主开关的HVPMOS晶体管的电压节点,以迫使主体电压(V B )等于或大于电源电压(V) S )或漏极电压(V D )。两个不重叠的时钟信号用于触发充电级和泵级的HVPMOS晶体管。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010098944A

    专利类型

  • 公开/公告日2010-04-30

    原文格式PDF

  • 申请/专利权人 DIALOG SEMICONDUCTOR GMBH;

    申请/专利号JP20090237342

  • 发明设计人 CANG JI;

    申请日2009-10-14

  • 分类号H02M3/07;

  • 国家 JP

  • 入库时间 2022-08-21 19:00:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号