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Manufacturing method of the optical functional multilayer body and method of manufacturing the optical functional compound semiconductor superlattice structures

机译:光学功能多层体的制造方法和光学功能化合物半导体超晶格结构的制造方法

摘要

PROBLEM TO BE SOLVED: To provide an optical functional compound semiconductor superlattice structure, multilayered material equipped with optical functionality and methods of manufacturing the structure and material. ;SOLUTION: After a substrate 900 is moved to a position above a deposition chamber 300, Ga is caused to uniformly deposit on the surface of the substrate 900 by exposing the surface to Ga for an arbitrary period of time. Then the substrate 900 is moved to a position above another deposition chamber 200 and exposed to NH3 for an arbitrary period of time. When the substrate 900 is exposed to the NH3, one atomic GaN layer is formed on the AlN of the substrate 900. Then Al is caused to deposit on the substrate 900 by moving the substrate 900 to a position above a third deposition chamber 400 and exposing the substrate 900 to TMA for an arbitrary period of time. In addition, the substrate 900 is again moved to the position above the deposition chamber 200, and the surface of the substrate 900 is again exposed to NH3 for an arbitrary period of time. When the surface is exposed to the NH3, one atomic AlN layer is formed on the substrate 900. Thereafter, the optical functional compound semiconductor superlattice structure is obtained by alternately laminating several tens to hundreds of atomic GaN layers and several tens to hundreds of atomic AlN layers upon another by repeating the formation of GaN and AlN in prescribed order.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种具有光学功能的化合物半导体超晶格结构,具有光学功能的多层材料以及制造该结构和材料的方法。 ;解决方案:在将衬底900移动到沉积室300上方的位置之后,通过在任意时间段内将Ga暴露在Ga上,使Ga均匀地沉积在衬底900的表面上。然后,将衬底900移动到另一个沉​​积室200上方的位置,并暴露于NH 3 任意时间段。当衬底900暴露于NH 3 时,在衬底900的AlN上形成一层原子GaN层。然后,通过将衬底900移动到某个位置,使Al沉积在衬底900上。在第三沉积腔室400上方的上方,并且将衬底900暴露于TMA任意时间段。另外,衬底900再次移动到沉积室200上方的位置,并且衬底900的表面再次暴露于NH 3 任意时间段。当该表面暴露于NH 3 时,在衬底900上形成一个原子AlN层。此后,通过交替层叠数十至数百个原子GaN层而获得光学功能化合物半导体超晶格结构。并按规定的顺序重复形成GaN和AlN,形成一层几十到几百个原子AlN层。版权所有:(C)2003,JPO

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