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METHOD OF MEASURING NUMERICAL APERTURE OF EXPOSURE MACHINE, CONTROL WAFER, PHOTOMASK, AND METHOD OF MONITORING NUMERICAL APERTURE OF EXPOSURE MACHINE
METHOD OF MEASURING NUMERICAL APERTURE OF EXPOSURE MACHINE, CONTROL WAFER, PHOTOMASK, AND METHOD OF MONITORING NUMERICAL APERTURE OF EXPOSURE MACHINE
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机译:曝光机的数值孔径的测量方法,控制晶片,光罩以及曝光机的数值孔径的监视方法
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摘要
A method of measuring a numerical aperture of an exposure machine is described. A control wafer having vernier marks thereon and an aberration mask having pinholes therein are provided, wherein each pinhole corresponds to a vernier mark in position. A lithography process using the exposure machine and the aberration mask is performed to the control wafer, so as to form over each vernier mark a photoresist pattern having the same shape of the illumination pattern of the light source of the exposure machine. The numerical aperture of the exposure machine is then derived from a graduation of the vernier mark corresponding to an outer edge of the photoresist pattern.
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