Disclosed are methods of making fine patterns by exploiting difference in threshold laser fluence of materials and a thin film transistor (TFT) fabrication methods using the same, and more particularly, to a method of forming a fine pattern and a method of fabricating a TFT through the same method, in which a plurality of layers different in threshold laser fluence are stacked and then exposed to a laser so that a layer having a low threshold laser fluence can be selectively removed, thereby making fine patterns precisely and forming a cavity of a gate electrode precisely and easily.
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