METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM

摘要

The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.