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METHOD OF OPTIMIZING SIDEWALL SPACER SIZE FOR SILICIDE PROXIMITY WITH IN-SITU CLEAN
METHOD OF OPTIMIZING SIDEWALL SPACER SIZE FOR SILICIDE PROXIMITY WITH IN-SITU CLEAN
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机译:采用原位清洁技术优化侧墙间距的侧壁间距的方法
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摘要
A method that includes forming a gate of a semiconductor device on a substrate, and etching sidewall spacers on sides of the gate to provide a proximity value, where the proximity value is defined as a distance between the gate and an edge of a performance-enhancing region. The sidewall spacers are used to define the edge of the region during formation of the region in the substrate. The method also includes pre-cleaning the gate and the substrate in preparation for formation of the region, where the etching and the pre-cleaning are performed in a continuous vacuum.
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