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Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device
Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device
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机译:射频频率超过10 GHz的半导体器件及其制造方法
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摘要
A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.
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