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Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device

机译:射频频率超过10 GHz的半导体器件及其制造方法

摘要

A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.
机译:公开了具有半导体芯片的用于大于10GHz的射频的半导体器件。在一个实施例中,半导体芯片在其有源顶侧上具有射频区域和低频区域和/或被供应直流电压的区域。在一个实施例中,将低频区域和/或被提供半导体芯片的DC电压的区域直接嵌入塑料外壳组合物中,该塑料外壳组合物被布置成与射频间隔开。半导体芯片的有源顶面上的区域。

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