NICKEL-CONTAINING FILM-FORMING MATERIAL AND PROCESS FOR PRODUCING NICKEL-CONTAINING FILM

摘要

NICKEL-CONTAINING FILM-FORMING MATERIAL AND PROCESS FOR PRODUCINGNICKEL-CONTAINING FILM ABSTRACT It is an object of the present invention to provide anickel-containing film-forming material which has a low melting point, can be handled as a liquid, has a high vapor pressure, can be readily synthesized industrially, is stable and can be readily formed into a favorable film in the formation of a nickel-containing film by aCVD (chemical vapor deposition) method, preferably in the formation of a nickel silicide film. The nickel-containing film-forming material of the invention is characterized by comprising a compound representedbya structureof the following formula (1) . In the formula (1), R[err] and R[err] are each independently a hydrogen atom or a grouprepresented by a structure of the following formula (2), a and b are each an integer of 0 to 4, and a and b satisfy the condition of 0[err]a+b[err]4 with the exception of a case where R[err] and R[err] are both hydrogen atoms. In the formula (2) , R[err], R[err] and R[err] are each independently an alkyl group of 1 to 2 carbon atoms.[err]