PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS

摘要

Method and apparatus are provided for treatment of a deposited material layer. In one embodiment, a method is provided for processing a substrate including depositing a metal-containing layer using an atomic layer deposition technique, exposing the metal-containing layer to a plasma treatment process at a temperature of less than about 200 °C, and exposing the metal-containing layer to a thermal anneal process at a temperature of about 600 °C or greater. The plasma treatment process and/or the thermal anneal process may use a nitrating gas, which may form a passivating surface or layer with the metal-containing layer.