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TRANSPARENT CONDUCTIVE THIN FILM AND A MANUFACTURING METHOD THEREOF, USING AN ATOMIC LAYER DEPOSITION METHOD AND A CHEMICAL VAPOR DEPOSITION METHOD
TRANSPARENT CONDUCTIVE THIN FILM AND A MANUFACTURING METHOD THEREOF, USING AN ATOMIC LAYER DEPOSITION METHOD AND A CHEMICAL VAPOR DEPOSITION METHOD
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机译:透明导电薄膜及其制造方法的原子层沉积法和化学气相沉积法
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摘要
PURPOSE: A transparent conductive thin film and a manufacturing method thereof are provided to deposit a metal layer through an atomic layer deposition method and form a metal oxide layer through a chemical vapor deposition method, so as to form a transparent conductive thin film having high light transmission and low resistivity.;CONSTITUTION: A transparent conductive thin film comprises one or more metal layers(210a) and one or more metal oxide layers(220a) laminated alternately with the metal layer. The metal layer uses one among Zn, Sn, In, Cd, Ga, Al, Ni, Fe, Co, W, Ti, Cr, Mo, Cu, Ag, Au, Pt and their alloy. The metal layer is a transparent conductive thin film laminated to the atomic layer. In case the metal oxide layer uses one among Zn oxide, Sn oxide, In oxide, Cd oxide, Ga oxide, Al oxide and ITO, the metal layer uses one among Zn, Sn, In, Cd, Ga, Al, and their alloy.;COPYRIGHT KIPO 2010
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