首页> 外国专利> TRANSPARENT CONDUCTIVE THIN FILM AND A MANUFACTURING METHOD THEREOF, USING AN ATOMIC LAYER DEPOSITION METHOD AND A CHEMICAL VAPOR DEPOSITION METHOD

TRANSPARENT CONDUCTIVE THIN FILM AND A MANUFACTURING METHOD THEREOF, USING AN ATOMIC LAYER DEPOSITION METHOD AND A CHEMICAL VAPOR DEPOSITION METHOD

机译:透明导电薄膜及其制造方法的原子层沉积法和化学气相沉积法

摘要

PURPOSE: A transparent conductive thin film and a manufacturing method thereof are provided to deposit a metal layer through an atomic layer deposition method and form a metal oxide layer through a chemical vapor deposition method, so as to form a transparent conductive thin film having high light transmission and low resistivity.;CONSTITUTION: A transparent conductive thin film comprises one or more metal layers(210a) and one or more metal oxide layers(220a) laminated alternately with the metal layer. The metal layer uses one among Zn, Sn, In, Cd, Ga, Al, Ni, Fe, Co, W, Ti, Cr, Mo, Cu, Ag, Au, Pt and their alloy. The metal layer is a transparent conductive thin film laminated to the atomic layer. In case the metal oxide layer uses one among Zn oxide, Sn oxide, In oxide, Cd oxide, Ga oxide, Al oxide and ITO, the metal layer uses one among Zn, Sn, In, Cd, Ga, Al, and their alloy.;COPYRIGHT KIPO 2010
机译:目的:提供一种透明导电薄膜及其制造方法,以通过原子层沉积方法沉积金属层,并通过化学气相沉积方法形成金属氧化物层,从而形成具有高光的透明导电薄膜。组成:一种透明导电薄膜,包括一层或多层金属层(210a)和一层或多层与金属层交替层压的金属氧化物层(220a)。金属层使用Zn,Sn,In,Cd,Ga,Al,Ni,Fe,Co,W,Ti,Cr,Mo,Cu,Ag,Au,Pt及其合金中的一种。金属层是层叠在原子层上的透明导电性薄膜。在金属氧化物层使用Zn氧化物,Sn氧化物,In氧化物,Cd氧化物,Ga氧化物,Al氧化物和ITO中的一种的情况下,金属层使用Zn,Sn,In,Cd,Ga,Al及其合金中的一种。; COPYRIGHT KIPO 2010

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