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METHOD OF FABRICATING A GRAPHENE NANO-DEVICE HAVING STABLE PROPERTY AND HIGH ELECTRIC MOBILITY

机译:具有稳定性能和高电导率的石墨烯纳米器件的制备方法

摘要

PURPOSE: A method of fabricating a graphene nano-device is provided to form a graphene nano structure without the damage of a graphene film by using an oxide nano structure aligned as mask to implement the anisotropic etching.;CONSTITUTION: A graphene layer(120) is bonded on the substrate(110). The substrate is dipped into the liquid Including sn oxide nanostructure(130). The oxide nano structure of being included in solution is adsorbed in the graphene film. The oxide nano structure of being adsorbed on the graphene film is arranged to the predetermined direction. The anisotropic etching is implemented using the oxide nano structure of being arranged as mask. The oxide nano structure of remaining after the anisotropic etching is removed. The anisotropic etching the ion beam etching which it is proceeded by using the oxide nano structure arranged as mask.;COPYRIGHT KIPO 2010
机译:目的:提供一种制造石墨烯纳米器件的方法,该方法是通过使用对准的氧化物纳米结构作为掩膜来进行各向异性刻蚀,以在不损坏石墨烯膜的情况下形成石墨烯纳米结构。;组成:石墨烯层(120)粘接在基板(110)上。将衬底浸入包括氧化锡纳米结构的液体中(130)。溶液中包含的氧化物纳米结构被吸附在石墨烯膜中。吸附在石墨烯膜上的氧化物纳米结构沿预定方向排列。使用被布置为掩模的氧化物纳米结构来实施各向异性蚀刻。去除各向异性蚀刻后残留的氧化物纳米结构。各向异性蚀刻是通过使用布置为掩模的氧化物纳米结构进行的离子束蚀刻。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100016929A

    专利类型

  • 公开/公告日2010-02-16

    原文格式PDF

  • 申请/专利权人 SNU R&DB FOUNDATION;

    申请/专利号KR20080076585

  • 发明设计人 HONG SEUNG HUN;LEE JOO HYUNG;KIM TAE HYUN;

    申请日2008-08-05

  • 分类号H01L21/027;B82B3/00;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:18

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