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METHOD OF FABRICATING A GRAPHENE NANO-DEVICE HAVING STABLE PROPERTY AND HIGH ELECTRIC MOBILITY
METHOD OF FABRICATING A GRAPHENE NANO-DEVICE HAVING STABLE PROPERTY AND HIGH ELECTRIC MOBILITY
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机译:具有稳定性能和高电导率的石墨烯纳米器件的制备方法
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摘要
PURPOSE: A method of fabricating a graphene nano-device is provided to form a graphene nano structure without the damage of a graphene film by using an oxide nano structure aligned as mask to implement the anisotropic etching.;CONSTITUTION: A graphene layer(120) is bonded on the substrate(110). The substrate is dipped into the liquid Including sn oxide nanostructure(130). The oxide nano structure of being included in solution is adsorbed in the graphene film. The oxide nano structure of being adsorbed on the graphene film is arranged to the predetermined direction. The anisotropic etching is implemented using the oxide nano structure of being arranged as mask. The oxide nano structure of remaining after the anisotropic etching is removed. The anisotropic etching the ion beam etching which it is proceeded by using the oxide nano structure arranged as mask.;COPYRIGHT KIPO 2010
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