IMAGE SENSOR CAPABLE OF REMOVING A DANGLING BOND BY OPERATING HIGH PRESSURE ANNEALING PROCESS, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce the dark current of the image sensor by executing an annealing process in a high pressure state using gas including at least one among hydrogen, deuterium and tritium.;CONSTITUTION: A transistor structure(15) is formed on a semiconductor substrate(10). A metal wiring layer is formed on the transistor structure. A protective film(30) is formed on the metal wiring layer. A nitride film is formed on the protective film. The semiconductor substrate including the nitride film is annealed in the high pressure. The annealing is executed in the pressure condition of 7~40 atm by using gas including at least one among hydrogen, deuterium, tritium, nitrogen, argon, and helium.;COPYRIGHT KIPO 2010