首页> 外国专利> METHOD FOR REMOVING PARTICLES IN AN IMAGE SENSOR MANUFACTURING PROCESS, CAPABLE OF MAINTAINING AN ORIGINAL SHAPE OF A SPACER STRUCTURE AFTER A PARTICLE REMOVING PROCESS

METHOD FOR REMOVING PARTICLES IN AN IMAGE SENSOR MANUFACTURING PROCESS, CAPABLE OF MAINTAINING AN ORIGINAL SHAPE OF A SPACER STRUCTURE AFTER A PARTICLE REMOVING PROCESS

机译:去除图像传感器制造过程中的颗粒的方法,该方法能够在去除颗粒后保持空间结构的原始形状

摘要

PURPOSE: A method for removing particles in an image sensor manufacturing process is provided to maintain a spacer structure after removing the particles by efficiently removing silicon particles after forming a spacer using a zeta potential.;CONSTITUTION: A gate including a gate oxide layer(215) and a gate electrode(217) is formed on a semiconductor substrate(210). A spacer insulation layer is formed on the semiconductor substrate with the gate. A spacer(230-1) is formed by etching back the semiconductor substrate with the spacer insulation layer. Particles cohere by reducing a zeta potential of the particles due to a loss of the semiconductor substrate in a spacer forming process by an etch-back method. The cohering particles(240-1) are removed by performing a rinse process.;COPYRIGHT KIPO 2010
机译:目的:提供一种在图像传感器制造工艺中去除颗粒的方法,以通过在使用zeta电位形成间隔物后有效去除硅颗粒,从而在去除颗粒后保持间隔物结构。;组成:一种包括栅氧化层的栅极(215栅电极(217)形成在半导体衬底(210)上。间隔绝缘层与栅极一起形成在半导体衬底上。通过用间隔物绝缘层回蚀半导体衬底来形成间隔物(230-1)。在通过回蚀法进行的间隔物形成工艺中,通过减小由于半导体衬底的损失而导致的粒子的ζ电位来使粒子凝聚。通过冲洗过程除去粘附的颗粒(240-1)。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100030815A

    专利类型

  • 公开/公告日2010-03-19

    原文格式PDF

  • 申请/专利权人 DONGBU HITEK CO. LTD.;

    申请/专利号KR20080089714

  • 发明设计人 PARK KANG PIL;

    申请日2008-09-11

  • 分类号H01L27/146;H01L21/302;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:06

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