首页> 外国专利> HIGH VOLTAGE INSULATOR FOR PREVENTING INSTABILITY IN AN ION IMPLANTER DUE TO TRIPLE-JUNCTION BREAKDOWN

HIGH VOLTAGE INSULATOR FOR PREVENTING INSTABILITY IN AN ION IMPLANTER DUE TO TRIPLE-JUNCTION BREAKDOWN

机译:高压绝缘子,用于防止三键击穿引起的离子注入不稳定

摘要

A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.;COPYRIGHT KIPO & WIPO 2010
机译:描述了一种用于防止离子注入机由于三重结击穿而引起的不稳定性的高压绝缘体。在一个实施例中,存在一种用于防止离子注入机中的三结不稳定性的设备。在该实施例中,存在第一金属电极和第二金属电极。绝缘体设置在第一金属电极和第二金属电极之间。绝缘体在第一金属电极和第二金属电极之间具有至少一个表面,该至少一个表面暴露于传输由离子注入机产生的离子束的真空中。第一导电层位于第一金属电极和绝缘体之间。第一导电层防止在第一电极,绝缘体和真空的界面处发生三重结击穿。第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。第二导电层可防止在第二电极,绝缘体和真空的界面处发生三重结击穿。; COPYRIGHT KIPO&WIPO 2010

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