HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING A SPRAY NOZZLE TO CONTROL A SPRAY ANGLE, CAPABLE OF FACILITATING SEPARATION AND REPLACEMENT PROCESSES

摘要

PURPOSE: A high density plasma chemical vapor deposition apparatus including a spray nozzle to control a spray angle is provided to uniformly spray a process gas to the edge of a substrate by controlling the spray angle of a spray hole.;CONSTITUTION: A processing chamber(100) comprises a chamber body and a chamber cover. A substrate support unit(200) is located inside the processing chamber. An upper gas supply nozzle(300) supplies the process gas to the processing chamber. A side gas supplying nozzle(400) is installed in the side of the processing chamber. A plasma generator(500) excites the process gas sprayed to the processing chamber to a plasma state.;COPYRIGHT KIPO 2010