SOI WIRELESS FREQUENCY SWITCH FOR REDUCING HARMONICS OF A HIGH FREQUENCY BY REMOVING CHARGES INSIDE AN INDUCED CHARGE LAYER

摘要

PURPOSE: An SOI(Semiconductor-On-Insulator) radio frequency switch for reducing harmonics of a high frequency is provided to improve the performance of an RF switch by reducing the harmonics through a signal combination.;CONSTITUTION: A first doping type semiconductor region and a second doping type semiconductor region are formed under a buried insulation layer(20) of an SOI substrate. The first doping type semiconductor region has the same doping as the lowermost semiconductor layer(10). The second doping type semiconductor region has the doping opposite to the lowermost semiconductor layer. The first doping type semiconductor region and the second doping type semiconductor region are electrically grounded or forward-biased to the lowermost semiconductor layer within the potential difference which does not exceed 0.6V to 0.8V. The charge formed in the induced charge layer by an electric signal is discharged through an electric contact connected to the first and second doping type semiconductor regions.;COPYRIGHT KIPO 2010